PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
If your circuit"s specifications require a device that can handle high levels of voltage, "s PNP general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
耗散功率 0.5 W
增益频宽积 150 MHz
击穿电压集电极-发射极 80 V
最小电流放大倍数hFE 100 @100mA, 5V
最大电流放大倍数hFE 300
额定功率Max 500 mW
工作温度Max 200 ℃
工作温度Min -65 ℃
耗散功率Max 500 mW
安装方式 Through Hole
引脚数 3
封装 TO-18-3
封装 TO-18-3
材质 Silicon
工作温度 -65℃ ~ 200℃ TJ
产品生命周期 Active
包装方式 Bag
RoHS标准 Non-Compliant
含铅标准
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2N4029 Microsemi 美高森美 | 当前型号 | 当前型号 |
JAN2N4033 美高森美 | 功能相似 | 2N4029和JAN2N4033的区别 |
JANTXV2N4033 美高森美 | 功能相似 | 2N4029和JANTXV2N4033的区别 |
2N4033 美高森美 | 功能相似 | 2N4029和2N4033的区别 |