2N2605

PNP硅低功率晶体管 PNP SILICON LOW POWER TRANSISTOR

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 400 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.