2N2945A

PNP硅小信号晶体管 PNP SILICON SMALL SIGNAL TRANSISTOR

Use this versatile PNP GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 25 V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 25 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.