2N5823 TIN/LEAD

Trans GP BJT PNP 60V 0.75A 3Pin TO-92-18R

Compared to other transistors, the PNP general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.