2N5154

NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR

FEATURES: ? PNP MEDIUM POWER SILICON TRANSISTOR ? Qualified per MIL-PRF-19500/561

艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN 2N5154 BJT, developed by Microsemi, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 5.5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5.5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.