每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
艾睿:
The three terminals of this NPN 2N5666 GP BJT from Microsemi give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
Verical:
Trans GP BJT NPN 200V 5A 1200mW 3-Pin TO-5 Bag
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
2N5666 Microsemi 美高森美 | 当前型号 | 当前型号 |
TIP105 NTE Electronics | 功能相似 | 2N5666和TIP105的区别 |
TIP107 NTE Electronics | 功能相似 | 2N5666和TIP107的区别 |
TIP112 NTE Electronics | 功能相似 | 2N5666和TIP112的区别 |