2N5430

2N5430图片1
2N5430概述

Trans GP BJT NPN 100V 7A 40000mW 3Pin2+Tab TO-66

Do you require a transistor in your circuit operating in the high-voltage range? This NPN general purpose bipolar junction transistor, developed by , is your solution. Its maximum power dissipation is 40000 mW. It has a maximum collector emitter voltage of 100 V.


艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This NPN 2N5430 general purpose bipolar junction transistor, developed by Microsemi, is your solution. Its maximum power dissipation is 40000 mW. It has a maximum collector emitter voltage of 100 V.


Verical:
Trans GP BJT NPN 100V 7A 40000mW 3-Pin2+Tab TO-66


2N5430中文资料参数规格
技术参数

频率 30 MHz

耗散功率 40 W

耗散功率Max 40000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-66-2

外形尺寸

封装 TO-66-2

物理参数

材质 Silicon

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

海关信息

ECCN代码 EAR99

数据手册

在线购买2N5430
型号: 2N5430
描述:Trans GP BJT NPN 100V 7A 40000mW 3Pin2+Tab TO-66
替代型号2N5430
型号/品牌 代替类型 替代型号对比

2N5430

Microsemi 美高森美

当前型号

当前型号

2N3879

美高森美

功能相似

2N5430和2N3879的区别

 锐单商城 - 一站式电子元器件采购平台  

 深圳锐单电子有限公司