2N5179 Series NPN 12V 50mA 300mW Through Hole RF Transistor - TO-72
This RF amplifier from is designed to operate at higher RF frequencies. This product"s minimum DC current gain is 25@3mA@1 V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
耗散功率 200 mW
击穿电压集电极-发射极 12 V
增益 15 dB
最小电流放大倍数hFE 25 @3mA, 1V
额定功率Max 200 mW
工作温度Max 200 ℃
工作温度Min -65 ℃
耗散功率Max 200 mW
安装方式 Through Hole
引脚数 4
封装 TO-72-3
宽度 5.84 mm
封装 TO-72-3
材质 Silicon
工作温度 -65℃ ~ 200℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2N5179 Central Semiconductor | 当前型号 | 当前型号 |
BFT93 恩智浦 | 功能相似 | 2N5179和BFT93的区别 |
BFS20 Diotec Semiconductor | 功能相似 | 2N5179和BFS20的区别 |
BFS17 Vishay Intertechnology | 功能相似 | 2N5179和BFS17的区别 |