2N3810U

PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR

Bipolar BJT Transistor Array 2 PNP Dual 60V 50mA 350mW Through Hole TO-78-6

艾睿:
The versatility of this PNP 2N3810U GP BJT from Microsemi makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 350 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

Verical:
Trans GP BJT PNP 60V 0.05A 6-Pin Case U