2N6211

PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR

The PNP general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 3000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 225 V and a maximum emitter base voltage of 6 V.