互补硅大功率晶体管 Complementary Silicon High−Power Transistors
The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.
Features
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- Low Collector-Emitter Saturation Voltage
VCEsat = 1.0 Vdc, max at IC = 15 Adc
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- Low Leakage Current
ICEX = 1.0 mAdc max at Rated Voltage
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- Excellent DC Current Gain
hFE = 20 min at IC = 10 Adc
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- High Current Gain Bandwidth Product
ft = 4.0 MHz min at IC = 1.0 Adc
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- Pb-Free Packages are Available
额定电压DC -60.0 V
额定电流 -25.0 A
极性 PNP
耗散功率 200 W
增益频宽积 4 MHz
击穿电压集电极-发射极 60 V
集电极最大允许电流 25A
最小电流放大倍数hFE 35
最大电流放大倍数hFE 100
工作温度Max 150 ℃
工作温度Min 65 ℃
耗散功率Max 200000 mW
安装方式 Through Hole
引脚数 3
封装 TO-204-2
长度 39.37 mm
宽度 26.67 mm
高度 8.51 mm
封装 TO-204-2
材质 Silicon
产品生命周期 Unknown
包装方式 Tray
最小包装 100
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2N5883 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
2N5883G 安森美 | 类似代替 | 2N5883和2N5883G的区别 |
2N5883LEADFREE Central Semiconductor | 功能相似 | 2N5883和2N5883LEADFREE的区别 |