2SA2169-TL-E

单晶体管 双极, PNP, -50 V, 130 MHz, 20 W, -10 A, 200 hFE

- 双极 BJT - 单 PNP 50 V 10 A 130MHz 950 mW 表面贴装型 TP-FA

得捷:
TRANS PNP 50V 10A TP-FA

立创商城:
PNP 50V 10A

贸泽:
双极晶体管 - 双极结型晶体管BJT BIP PNP 10A 50V

艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This PNP 2SA2169-TL-E general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 950 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans GP BJT PNP 50V 10A 3-Pin2+Tab TP-FA T/R

Chip1Stop:
Trans GP BJT PNP 50V 10A 3-Pin2+Tab TP-FA T/R

Verical:
Trans GP BJT PNP 50V 10A 950mW 3-Pin2+Tab TP-FA T/R