







STMICROELECTRONICS 2STR2215 单晶体管 双极, PNP, -15 V, 500 mW, 2 A, 280 hFE
Bipolar BJT Transistor PNP 15V 1.5A 500mW Surface Mount SOT-23-3
得捷:
TRANS PNP 15V 1.5A SOT23-3
e络盟:
STMICROELECTRONICS 2STR2215 单晶体管 双极, PNP, -15 V, 500 mW, 2 A, 280 hFE
艾睿:
Implement this versatile PNP 2STR2215 GP BJT from STMicroelectronics into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
Chip1Stop:
Trans GP BJT PNP 15V 1.5A 3-Pin SOT-23 T/R
Verical:
Trans GP BJT PNP 15V 1.5A 3-Pin SOT-23 T/R
Win Source:
TRANS PNP 15V 1.5A SOT-23
针脚数 3
极性 PNP
耗散功率 500 mW
击穿电压集电极-发射极 15 V
集电极最大允许电流 1.5A
最小电流放大倍数hFE 200 @500mA, 2V
额定功率Max 500 mW
直流电流增益hFE 280
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2STR2215 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
MMBT3906LT1G 安森美 | 功能相似 | 2STR2215和MMBT3906LT1G的区别 |
MMBTA92LT1G 安森美 | 功能相似 | 2STR2215和MMBTA92LT1G的区别 |
MMBT3906LT3G 安森美 | 功能相似 | 2STR2215和MMBT3906LT3G的区别 |