2SD1816S-E

双极晶体管 Bipolar Transistor

- 双极 BJT - 单 NPN 180MHz 通孔 TP

得捷:
TRANS NPN 100V 4A TP

立创商城:
2SD1816S-E

贸泽:
Bipolar Transistors - BJT BIP NPN 4A 100V

艾睿:
The three terminals of this NPN 2SD1816S-E GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans GP BJT NPN 100V 4A 3-Pin3+Tab TP Bag

Verical:
Trans GP BJT NPN 100V 4A 1000mW 3-Pin3+Tab TP Bag

Win Source:
TRANS NPN 100V 4A TP