2SD262300L

NPN硅外延平面型对于低频放大特点•低导通电阻Ron•S-迷你型包装，让精简的设备和通过自动插入磁带包装

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 25V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 20V 集电极连续输出电流ICCollector CurrentIC| 500mA/0.5A 截止频率fTTranstion FrequencyfT| 200MHz 直流电流增益hFEDC Current GainhFE| 300~500 管压降VCE（sat）Collector-Emitter Saturation Voltage| 140mV/0.14V 耗散功率PcPower Dissipation| 150mW/0.15W Description & Applications| Silicon NPN epitaxial planar type For low-frequency amplification Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 描述与应用| NPN硅外延平面型 对于低频放大 特点 •低导通电阻Ron •S-迷你型包装，让精简的设备和通过自动插入磁带包装