硅N沟道功率的F- MOS FET Silicon N-Channel Power F-MOS FET
N-Channel 450V 7A Tc 2W Ta, 40W Tc Through Hole TO-220D-A1
得捷: MOSFET N-CH 450V 7A TO220D-A1
Chip1Stop: Trans MOSFET N-CH 450V 7A 3-Pin3+Tab TO-220D-A1
Win Source: MOSFET N-CH 450V 7A TO-220D
额定电压DC 450 V
额定电流 8.00 A
耗散功率 2W Ta, 40W Tc
漏源极电压Vds 450 V
输入电容Ciss 1300pF @20VVds
耗散功率Max 2W Ta, 40W Tc
安装方式 Through Hole
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Unknown
包装方式 Bulk
RoHS标准 Non-Compliant
含铅标准 Contains Lead
数据手册