2N5681

MULTICOMP  2N5681  单晶体管 双极, NPN, 100 V, 30 MHz, 1 W, 1 A, 150 hFE

The is a 100V Silicon NPN Bipolar Epitaxial Planar Transistor designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.

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Collector-base voltageVcbo = 100V

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Emitter-base voltageVebo = 4V

e络盟:
单晶体管 双极, NPN, 100 V, 30 MHz, 1 W, 1 A, 150 hFE

Newark:
# MULTICOMP  2N5681  Bipolar BJT Single Transistor, NPN, 100 V, 30 MHz, 1 W, 1 A, 150 hFE