2N2369

MULTICOMP  2N2369  单晶体管 双极, 开关, NPN, 15 V, 500 MHz, 360 mW, 200 mA, 40 hFE

The from is a through hole, silicon planar epitaxial NPN high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. Typical application are low power, high speed saturated switching.

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Collector emitter voltage Vce of 15V

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Continuous collector current Ic of 200mA

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Power dissipation of 360mW

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Operating junction temperature range from -65°C to 200°C

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Collector emitter saturation voltage is less than 250mV at Ic=10mA

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DC current gain is greater than 20 at Ic=100mA