2SJ542-E

硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

   RDS on = 0.050 Ω typ.

• Low drive current.

• 4 V gate drive devices.

• High speed switching.

立创商城:
N沟道 60V 18A

Verical:
Trans MOSFET P-CH 60V 18A 3-Pin3+Tab TO-220AB Box