硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
RDS on = 0.17 Ω typ.
• 4 V gate drive devices
• High speed switching
极性 P-CH
漏源极电压Vds 60 V
连续漏极电流Ids 7A
封装 DPAK
产品生命周期 Not Recommended
数据手册