2STC5200

STMICROELECTRONICS  2STC5200  单晶体管 双极, NPN, 230 V, 30 MHz, 150 W, 8 A, 80 hFE

Description

This device is a NPN transistor manufactured using new BiT-LA Bipolar Transistor for linear amplifier technology. The resulting transistor shows good gain linearity behaviour.

Features

■ High breakdown voltage VCEO > 230V

■ Complementary to 2STA1943

■ Fast-switching speed

■ Typical fT = 30 MHz

Application

■ Audio power amplifier

得捷:
TRANS NPN 230V 15A TO264

e络盟:
单晶体管 双极, NPN, 230 V, 30 MHz, 150 W, 8 A, 80 hFE

艾睿:
Use this versatile NPN 2STC5200 GP BJT from STMicroelectronics to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V.

Chip1Stop:
Trans GP BJT NPN 230V 15A 3-Pin TO-264 Tube

Verical:
Trans GP BJT NPN 230V 15A 150000mW 3-Pin TO-264 Tube

DeviceMart:
TRANS NPN HP BIPO 230V TO-264

Win Source:
TRANS NPN 230V 15A TO-264