硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
Chip1Stop:
Trans MOSFET P-CH 100V 8A 3-Pin3+Tab TO-220FM Box