硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance
RDS=0.010 Ωtyp.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Chip1Stop:
Trans MOSFET N-CH 60V 45A 3-Pin3+Tab TO-3P Tube
Win Source:
Silicon N Channel MOS FET High Speed Power Switching
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
2SK2955-E Renesas Electronics 瑞萨电子 | 当前型号 | 当前型号 |
2SK2955 瑞萨电子 | 完全替代 | 2SK2955-E和2SK2955的区别 |