硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
• Low drive current
• 2.5 V Gate drive device can be driven from 3 V Source
• Suitable for Switching regulator, DC-DC converter
立创商城:
2SJ387L-E
罗切斯特:
Trans MOSFET P-CH 20V 10A 3-Pin3+Tab DPAKL-2 Box