2SK3475 N沟道MOSFET 20V 1A SOT-89/PW-Mini marking/标记 WB VHF和UHF频段放大器
最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 5V 最大漏极电流Id Drain Current| 1A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 开启电压Vgs(th) Gate-Source Threshold Voltage| 1.9-2.9V 耗散功率Pd Power Dissipation| 3W Description & Applications| TOSHIBA Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications Features Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications Output power: PO = 630 mW min Gain: GP = 14.9dB min Drain efficiency: ηD = 45% min 描述与应用| 场效应晶体管的硅N沟道MOS类型 VHF和UHF频段放大器的应用 特性 硅N沟道MOS型 VHF和UHF频段放大器的应用 输出功率:PO= 630毫瓦(最小) 增益:GP=14.9分贝(分) 漏极效率:ηD=45%(分钟)