A2I20D040NR1

A2I20D040NR1图片1
A2I20D040NR1概述

Amplifier,1400 to 2200MHz, 36.3W, Typ Gain in dB is 32.7 @ 1800MHz, 28V, LDMOS, SOT1730

Overview

The A2I20D040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

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## Features

* Extremely Wide RF Bandwidth

* RF Decoupled Drain Pins Reduce Overall Board Space

* On-Chip Matching 50 Ohm Input, DC Blocked

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* RoHS Compliant

## Features RF Performance Table

### 1800-2200 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ1A+B = 56 mA, IDQ2A+B = 220 mA, Pout = 5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
.
*Frequency** | **Gps
dB
.
* | **PAE
%
.
* | **ACPR
dBc
.
*

\---|---|---|---

1800 MHz| 32.7| 21.8| –43.6

1900 MHz| 32.6| 20.7| –44.5

2000 MHz| 32.8| 20.1| –44.8

2100 MHz| 32.9| 19.9| –44.9

2200 MHz| 33.3| 19.7| –44.5

A2I20D040NR1中文资料参数规格
技术参数

频率 1.4GHz ~ 2.2GHz

输出功率 44.5 dBm

增益 32.7 dB

测试频率 2.2 GHz

工作温度Max 225 ℃

工作温度Min -40 ℃

电源电压 28 V

封装参数

引脚数 19

封装 TO-270-17

外形尺寸

封装 TO-270-17

物理参数

工作温度 -40℃ ~ 225℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买A2I20D040NR1
型号: A2I20D040NR1
制造商: NXP 恩智浦
描述:Amplifier,1400 to 2200MHz, 36.3W, Typ Gain in dB is 32.7 @ 1800MHz, 28V, LDMOS, SOT1730

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