BSC0901NSATMA1

INFINEON  BSC0901NSATMA1  晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0016 ohm, 10 V, 2 V

表面贴装型 N 通道 30 V 28A（Ta），100A（Tc） 2.5W（Ta），69W（Tc） PG-TDSON-8-5

欧时:
MOSFET OptiMOS3 30V 100A 1.9mOhm TDSON8

得捷:
MOSFET N-CH 30V 28A/100A TDSON

贸泽:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

艾睿:
Compared to traditional transistors, BSC0901NSATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 69000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R

Chip1Stop:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC0901NSATMA1  MOSFET Transistor, N Channel, 100 A, 30 V, 0.0016 ohm, 10 V, 2 V

Win Source:
MOSFET N-CH 30V 28A/100A TDSON / N-Channel 30 V 28A Ta, 100A Tc 2.5W Ta, 69W Tc Surface Mount PG-TDSON-8-5