BSZ42DN25NS3GATMA1

INFINEON  BSZ42DN25NS3GATMA1  晶体管, MOSFET, N沟道, 5 A, 250 V, 0.371 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ42DN25NS3GATMA1, 5 A, Vds=250 V, 8引脚 TSDSON封装

得捷:
MOSFET N-CH 250V 5A TSDSON-8

贸泽:
MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3

e络盟:
晶体管, MOSFET, N沟道, 5 A, 250 V, 0.371 ohm, 10 V, 3 V

艾睿:
Make an effective common source amplifier using this BSZ42DN25NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 33800 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 250V 5A 8-Pin TSDSON T/R

Chip1Stop:
Trans MOSFET N-CH 250V 5A 8-Pin TSDSON EP

TME:
Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 250V 5A 8-Pin TSDSON EP T/R