晶体管 双极-射频, NPN, 4.1 V, 46 GHz, 200 mW, 50 mA, 110 hFE
Description:
The BFP640FESD is a Silicon Germanium Carbon SiGe:C NPN Heterojunction wideband Bipolar RF Transistor HBT in a plastic thin small flat 4-pin dual emitter package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.
Summary of Features:
针脚数 4
极性 NPN
耗散功率 200 mW
输入电容 0.6 pF
击穿电压集电极-发射极 4.7 V
最小电流放大倍数hFE 110 @30mA, 3V
额定功率Max 200 mW
直流电流增益hFE 110
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 4
封装 SMD-4
封装 SMD-4
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Mobile, portable and fixed connect, 3G/4G UMTS/LTE mobile phone applications, ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier, Multimedia applications such as mobile/portable TV, CATV, FM radio
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99