BSC025N03MSGATMA1

INFINEON  BSC025N03MSGATMA1  晶体管, MOSFET, N沟道, 100 A, 30 V, 2.1 mohm, 10 V, 1 V

表面贴装型 N 通道 30 V 23A（Ta）. 100A（Tc） 2.5W（Ta），83W（Tc） PG-TDSON-8-1

得捷:
MOSFET N-CH 30V 100A TDSON-8

e络盟:
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0021 ohm, 10 V, 1 V

艾睿:
As an alternative to traditional transistors, the BSC025N03MSGATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 30V 23A 8-Pin TDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 23A; 83W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC025N03MSGATMA1  MOSFET Transistor, N Channel, 100 A, 30 V, 2.1 mohm, 10 V, 1 V

Win Source:
MOSFET N-CH 30V 100A TDSON-8