BFP720ESDH6327XTSA1

晶体管 双极-射频, NPN, 4.7 V, 43 GHz, 100 mW, 30 mA, 160 hFE

RF NPN 4.7V 30mA 43GHz 100mW 表面贴装型 SOT-343

得捷:
RF TRANS NPN 4.7V 43GHZ SOT343

贸泽:
射频RF双极晶体管 RF BIP TRANSISTORS

e络盟:
晶体管 双极-射频, NPN, 4.7 V, 43 GHz, 100 mW, 30 mA, 160 hFE

艾睿:
Trans RF BJT NPN 4.2V 0.03A 100mW Automotive 4-Pin3+Tab SOT-343 T/R

安富利:
The BFP720ESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon SiGe:C heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.2 V and currents up to IC = 30 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 43 GHz, hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge ESD and high levels of RF input power. The device is housed in an easy to use plastic package with visible leads.

Verical:
Trans RF BJT NPN 4.2V 0.03A 100mW Automotive 4-Pin3+Tab SOT-343 T/R