STMICROELECTRONICS BUL138 单晶体管 双极, NPN, 400 V, 80 W, 5 A, 10 hFE
高电压,STMicroelectronics
得捷:
TRANS NPN 400V 5A TO220
欧时:
STMicroelectronics BUL138 , NPN 晶体管, 5 A, Vce=400 V, HFE:8, 3引脚 TO-220封装
贸泽:
双极晶体管 - 双极结型晶体管BJT NPN Hi-Volt Fast Sw
艾睿:
Add switching and amplifying capabilities to your electronic circuit with this NPN BUL138 GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.
安富利:
Trans GP BJT NPN 400V 5A 3-Pin3+Tab TO-220 Tube
富昌:
NPN 80 W 400 V 5 A Flange Mount Fast-Switching Power Transistor - TO-220-3
Chip1Stop:
Trans GP BJT NPN 400V 5A 3-Pin3+Tab TO-220 Tube
Verical:
Trans GP BJT NPN 400V 5A 80000mW 3-Pin3+Tab TO-220AB Tube
Newark:
# STMICROELECTRONICS BUL138 Bipolar BJT Single Transistor, NPN, 400 V, 80 W, 5 A, 10 hFE
Win Source:
TRANS NPN 400V 5A TO-220
额定电压DC 400 V
额定电流 5.00 A
针脚数 3
极性 NPN
耗散功率 80 W
击穿电压集电极-发射极 400 V
集电极最大允许电流 5A
最小电流放大倍数hFE 8 @2A, 5V
最大电流放大倍数hFE 40
额定功率Max 80 W
直流电流增益hFE 10
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 80000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 9.15 mm
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BUL138 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
BUL381D 意法半导体 | 类似代替 | BUL138和BUL381D的区别 |
BUL128D-B 意法半导体 | 类似代替 | BUL138和BUL128D-B的区别 |
BUL89 意法半导体 | 类似代替 | BUL138和BUL89的区别 |