BSO615NGHUMA1

INFINEON  BSO615NGHUMA1  双路场效应管, MOSFET, 双N沟道, 2.6 A, 60 V, 0.12 ohm, 4.5 V, 1.6 V

SIPMOS® 双 N 通道 MOSFET

得捷:
MOSFET 2N-CH 60V 2.6A 8SOIC

欧时:
Infineon SIPMOS 系列 双 Si N沟道 MOSFET BSO615NGHUMA1, 2.6 A, Vds=60 V, 8引脚 SOIC封装

e络盟:
双路场效应管, MOSFET, N沟道, 60 V, 2.6 A, 0.12 ohm, SOIC, 表面安装

艾睿:
Create an effective common drain amplifier using this BSO615NGHUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 60V 2.6A 8-Pin SO T/R

富昌:
双 N-沟道 60 V 2.6 A 0.15 Ω 14 nC SipMOS 小信号 晶体管 - SOIC-8

TME:
Transistor: N-MOSFET; unipolar; 60V; 2.6A; 2W; SO8

Verical:
Trans MOSFET N-CH 60V 2.6A Automotive 8-Pin DSO T/R

Newark:
# INFINEON  BSO615NGHUMA1  Dual MOSFET, Dual N Channel, 2.6 A, 60 V, 0.12 ohm, 4.5 V, 1.6 V