BDP954H6327XTSA1

Infineon BDP954H6327XTSA1 , PNP 晶体管, 3 A, Vce=100 V, HFE:15, 100 MHz, 3 + Tab引脚 SOT-223封装

通用 PNP ，

得捷:
TRANS PNP 100V 3A SOT223-4

欧时:
Infineon BDP954H6327XTSA1 , PNP 晶体管, 3 A, Vce=100 V, HFE:15, 100 MHz, 3 + Tab引脚 SOT-223封装

贸泽:
Bipolar Transistors - BJT AF TRANSISTORS

艾睿:
The three terminals of this PNP BDP954H6327XTSA1 GP BJT from Infineon Technologies give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 5000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT PNP 100V 3A 4-Pin SOT-223 T/R

Verical:
Trans GP BJT PNP 100V 3A 5000mW Automotive 4-Pin3+Tab SOT-223 T/R