BDX54BG

塑料中功率互补硅晶体管 Plastic Medium-Power Complementary Silicon Transistors

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

Features

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High DC Current Gain hFE = 2500 Typ @ IC = 4.0 Adc

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Collector Emitter Sustaining Voltage @ 100 mAdc

VCEOsus = 80 Vdc Min BDX53B, 54B

VCEOsus = 100 Vdc Min - BDX53C, 54C

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Low Collector-Emitter Saturation Voltage

VCEsat = 2.0 Vdc Max @ IC = 3.0 Adc

VCEsat = 4.0 Vdc Max @ IC = 5.0 Adc

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Monolithic Construction with Built-In Base-Emitter Shunt Resistors

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TO-220AB Compact Package

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Pb-Free Packages are Available