BSZ123N08NS3GATMA1

INFINEON  BSZ123N08NS3GATMA1  晶体管, MOSFET, N沟道, 40 A, 80 V, 10.3 mohm, 10 V, 2.8 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 80V 10A/40A 8TSDSON

欧时:
Infineon OptiMOS 3 系列 N沟道 MOSFET BSZ123N08NS3GATMA1, 40 A, Vds=80 V, 8引脚 TSDSON封装

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; BSZ123N08NS3GATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 80V 10A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 80V 10A Automotive 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ123N08NS3GATMA1  MOSFET Transistor, N Channel, 40 A, 80 V, 10.3 mohm, 10 V, 2.8 V