BD810G

ON SEMICONDUCTOR  BD810G.  双极性晶体管

Plastic High Power Silicon Transistor

These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Features

• DC Current Gain - hFE = 30 Min @ IC = 2.0 Adc

• Pb-Free Packages are Available

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得捷:
TRANS PNP 80V 10A TO220

立创商城:
PNP 80V 10A

贸泽:
Bipolar Transistors - BJT 10A 80V 90W PNP

e络盟:
单晶体管 双极, PNP, -80 V, 1.5 MHz, 90 W, -10 A, 15 hFE

艾睿:
Trans GP BJT PNP 80V 10A 90000mW 3-Pin3+Tab TO-220AB Tube

安富利:
Trans GP BJT PNP 80V 10A 3-Pin3+Tab TO-220AB Rail

Chip1Stop:
Trans GP BJT PNP 80V 10A 3-Pin3+Tab TO-220AB Rail

Verical:
Trans GP BJT PNP 80V 10A 90000mW 3-Pin3+Tab TO-220AB Tube

Newark:
# ON SEMICONDUCTOR  BD810G  Bipolar BJT Single Transistor, General Purpose, PNP, 80 V, 1.5 MHz, 90 W, -10 A, 15 hFE

Win Source:
TRANS PNP 80V 10A TO220 / Bipolar BJT Transistor PNP 80 V 10 A 1.5MHz 90 W Through Hole TO-220