BDX34BG

ON SEMICONDUCTOR  BDX34BG  单晶体管 双极, PNP, -80 V, 70 W, -10 A, 750 hFE 新

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

Features

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High DC Current Gain -

hFE = 2500 typ. at IC = 4.0

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Collector-Emitter Sustaining Voltage at 100 mAdc

VCEOsus = 80 Vdc min. BDX33B, 34B

VCEOsus = 100 Vdc min. - BDX33C, 34C

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Low Collector-Emitter Saturation Voltage

CEsat = 2.5 Vdc max. at IC = 3.0 Adc BDX33B, 33C/34B, 34C

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Monolithic Construction with Build-In Base-Emitter Shunt resistors

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TO-220AB Compact Package

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Pb-Free Packages are Available