STMICROELECTRONICS BUL1102EFP 单晶体管 双极, NPN, 450 V, 30 W, 4 A, 20 hFE
The is a NPN fast-switching Power Transistor manufactured in Multi Epitaxial Planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. It has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
- .
- High voltage capability
- .
- Very high switching speed
针脚数 3
极性 NPN
耗散功率 30 W
击穿电压集电极-发射极 450 V
集电极最大允许电流 4A
最小电流放大倍数hFE 12 @2A, 5V
额定功率Max 30 W
直流电流增益hFE 20
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 70000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 电源管理, Power Management, 工业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BUL1102EFP ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
BUL1102E 意法半导体 | 类似代替 | BUL1102EFP和BUL1102E的区别 |
BUL128FP 意法半导体 | 类似代替 | BUL1102EFP和BUL128FP的区别 |