BD711

STMICROELECTRONICS  BD711  单晶体管 双极, NPN, 100 V, 3 MHz, 75 W, 12 A, 120 hFE

NPN POWER TRANSISTORS

得捷:
TRANS NPN 100V 12A TO220

e络盟:
STMICROELECTRONICS  BD711  单晶体管 双极, NPN, 100 V, 3 MHz, 75 W, 12 A, 120 hFE

艾睿:
Implement this NPN BD711 GP BJT from STMicroelectronics to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 75000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

TME:
Transistor: bipolar, NPN; 100V; 12A; 75W; TO220

Win Source:
TRANS NPN 100V 12A TO-220