BSZ019N03LSATMA1

Infineon OptiMOS 系列 Si N沟道 MOSFET BSZ019N03LSATMA1, 40 A, Vds=30 V, 8引脚 TDSON封装

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

欧时:
Infineon MOSFET BSZ019N03LS

得捷:
MOSFET N-CH 30V 22A . 40A TSDSON

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the BSZ019N03LSATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 69000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 30V 22A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 30V 22A 8-Pin TSDSON EP T/R