BSZ075N08NS5ATMA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

表面贴装型 N 通道 40A（Tc） 69W（Tc） PG-TSDSON-8

得捷:
MOSFET N-CH 80V 40A 8TSDSON

欧时:
Infineon BSZ075N08NS5ATMA1

立创商城:
N沟道 80V 40A

贸泽:
MOSFET N-Ch 80V 40A TSDSON-8

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; BSZ075N08NS5ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 69000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes optimos 5 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R