BSZ150N10LS3GATMA1

INFINEON  BSZ150N10LS3GATMA1  晶体管, MOSFET, N沟道, 40 A, 100 V, 0.013 ohm, 10 V, 1.7 V 新

表面贴装型 N 通道 40A（Tc） 2.1W（Ta），63W（Tc） PG-TSDSON-8

得捷:
MOSFET N-CH 100V 40A 8TSDSON

欧时:
Infineon MOSFET BSZ150N10LS3GATMA1

e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 40 A, 0.013 ohm, PG-TSDSON, 表面安装

艾睿:
This BSZ150N10LS3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 100V 8A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 100V 8A Automotive 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ150N10LS3GATMA1  MOSFET, N-CH, 100V, 40A, PG-TSDSON-8 New