STMICROELECTRONICS BD534 单晶体管 双极, PNP, 45 V, 50 W, -6 A, 40 hFE
Description
The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are and BD536.
Features
■ BD533, BD535, and BD537 are NPN transistors
得捷:
TRANS PNP 45V 8A TO-220
e络盟:
STMICROELECTRONICS BD534 单晶体管 双极, PNP, 45 V, 50 W, -6 A, 40 hFE
艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This PNP BD534 general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
Chip1Stop:
Trans GP BJT PNP 45V 8A 3-Pin3+Tab TO-220 Tube
Win Source:
COMPLEMENTARY SILICON POWER TRANSISTORS
额定电压DC -45.0 V
额定电流 -8.00 A
针脚数 3
极性 PNP
耗散功率 50 W
击穿电压集电极-发射极 45 V
集电极最大允许电流 8A
最小电流放大倍数hFE 25 @2A, 2V
额定功率Max 50 W
直流电流增益hFE 40
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 50000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BD534 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
BD136-10 飞兆/仙童 | 功能相似 | BD534和BD136-10的区别 |
6354 美高森美 | 功能相似 | BD534和6354的区别 |