BD534

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BD534概述

STMICROELECTRONICS  BD534  单晶体管 双极, PNP, 45 V, 50 W, -6 A, 40 hFE

Description

The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are and BD536.

Features

■ BD533, BD535, and BD537 are NPN transistors


得捷:
TRANS PNP 45V 8A TO-220


e络盟:
STMICROELECTRONICS  BD534  单晶体管 双极, PNP, 45 V, 50 W, -6 A, 40 hFE


艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This PNP BD534 general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.


Chip1Stop:
Trans GP BJT PNP 45V 8A 3-Pin3+Tab TO-220 Tube


Win Source:
COMPLEMENTARY SILICON POWER TRANSISTORS


BD534中文资料参数规格
技术参数

额定电压DC -45.0 V

额定电流 -8.00 A

针脚数 3

极性 PNP

耗散功率 50 W

击穿电压集电极-发射极 45 V

集电极最大允许电流 8A

最小电流放大倍数hFE 25 @2A, 2V

额定功率Max 50 W

直流电流增益hFE 40

工作温度Max 150 ℃

工作温度Min -65 ℃

耗散功率Max 50000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

材质 Silicon

工作温度 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买BD534
型号: BD534
描述:STMICROELECTRONICS  BD534  单晶体管 双极, PNP, 45 V, 50 W, -6 A, 40 hFE
替代型号BD534
型号/品牌 代替类型 替代型号对比

BD534

ST Microelectronics 意法半导体

当前型号

当前型号

BD136-10

飞兆/仙童

功能相似

BD534和BD136-10的区别

6354

美高森美

功能相似

BD534和6354的区别

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