BDW46G

ON SEMICONDUCTOR  BDW46G  单晶体管 双极, 达林顿, PNP, 80 V, 4 MHz, 85 W, 15 A, 1000 hFE

This series of plastic, medium-power NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. The BDW42, BDW46 and BDW47 are complementary devices.

Features

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High DC Current Gain - hFE = 2500 typ. @ IC = 5.0 Adc.

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Collector Emitter Sustaining Voltage @ 30 mAdc:

VCEOsus = 80 Vdc min. BDW46

VCEOsus = 100 Vdc min. - BDW42/BDW47

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Low Collector Emitter Saturation Voltage

VCEsat = 2.0 Vdc max. @ IC = 5.0 Adc

VCEsat = 3.0 Vdc max. @ IC = 10.0 Adc

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Monolithic Construction with Built-In Base Emitter Shunt resistors

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TO-220AB Compact Package

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Pb-Free Packages are Available