INFINEON BSC060N10NS3GATMA1 晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
OptiMOS™3 功率 MOSFET，100V 及以上
得捷:
MOSFET N-CH 100V 14.9/90A 8TDSON
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC060N10NS3GATMA1, 90 A, Vds=100 V, 8引脚 TDSON封装
艾睿:
Compared to traditional transistors, BSC060N10NS3GATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
TME:
Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 100V 14.9A Automotive 8-Pin TDSON EP T/R
Newark:
MOSFET Transistor, N Channel, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
Win Source:
MOSFET N-CH 100V 90A TDSON-8
额定功率 125 W
针脚数 8
漏源极电阻 0.0053 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 2.7 V
漏源极电压Vds 100 V
连续漏极电流Ids 14.9A
上升时间 16 ns
输入电容Ciss 3700pF @50VVds
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8
长度 5.35 mm
宽度 6.1 mm
高度 1.1 mm
封装 PG-TDSON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, 车用, Power Management, Audio, Motor Drive & Control, , Industrial, Or-ing switches and circuit breakers in 48V systems, 电源管理, Power Management, 电机驱动与控制, Synchronous rectification for AC-DC SMPS, 音频
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BSC060N10NS3GATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BSC070N10NS3GATMA1 英飞凌 | 类似代替 | BSC060N10NS3GATMA1和BSC070N10NS3GATMA1的区别 |
IRFH5010TRPBF 英飞凌 | 功能相似 | BSC060N10NS3GATMA1和IRFH5010TRPBF的区别 |