INFINEON BSC190N15NS3GATMA1 晶体管, MOSFET, N沟道, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
OptiMOS™3 功率 MOSFET,100V 及以上
得捷:
MOSFET N-CH 150V 50A TDSON-8-1
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC190N15NS3GATMA1, 50 A, Vds=150 V, 8引脚 TDSON封装
贸泽:
MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSC190N15NS3GATMA1 power MOSFET is for you. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP
Chip1Stop:
Trans MOSFET N-CH 150V 50A Automotive 8-Pin TDSON EP T/R
TME:
Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Verical:
Trans MOSFET N-CH 150V 50A Automotive 8-Pin TDSON EP T/R
Newark:
MOSFET Transistor, N Channel, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
Win Source:
MOSFET N-CH 150V 50A TDSON-8
额定功率 125 W
针脚数 8
漏源极电阻 0.016 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 3 V
漏源极电压Vds 150 V
连续漏极电流Ids 50A
上升时间 53 ns
输入电容Ciss 2420pF @75VVds
额定功率Max 125 W
下降时间 6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125W Tc
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8
长度 5.35 mm
宽度 6.1 mm
高度 1.1 mm
封装 PG-TDSON-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Motor Drive & Control, , 车用, C, Or-ing switches and circuit breakers in 48V systems, 电源管理, Power Management, 通信与网络, Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters telecom, 音频
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BSC190N15NS3GATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
FDMS86200 飞兆/仙童 | 功能相似 | BSC190N15NS3GATMA1和FDMS86200的区别 |