BUK9E4R9-60E,127

BUK9E4R9-60E,127图片1
BUK9E4R9-60E,127概述

I2PAK N-CH 60V 100A

* AEC Q101 compliant * Repetitive avalanche rated * Suitable for thermally demanding environments due to 175 °C rating * True logic level gate with VGSth rating of greater than 0.5V at 175 °C


得捷:
MOSFET N-CH 60V 100A I2PAK


艾睿:
Trans MOSFET N-CH 60V 100A Automotive 3-Pin3+Tab I2PAK Rail


安富利:
Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.


DeviceMart:
MOSFET N-CH 60V I2PAK


BUK9E4R9-60E,127中文资料参数规格
技术参数

极性 N-CH

耗散功率 234W Tc

漏源极电压Vds 60 V

连续漏极电流Ids 100A

输入电容Ciss 9710pF @25VVds

额定功率Max 234 W

耗散功率Max 234W Tc

封装参数

安装方式 Through Hole

封装 TO-262-3

外形尺寸

封装 TO-262-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Obsolete

符合标准

RoHS标准 Exempt

含铅标准 无铅

数据手册

在线购买BUK9E4R9-60E,127
型号: BUK9E4R9-60E,127
制造商: NXP 恩智浦
描述:I2PAK N-CH 60V 100A

锐单商城 - 一站式电子元器件采购平台