功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
**1.5 A POWER TRANSISTORS NPN SILICON 45, 60, 80 V, 12.5 W**
This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Features
•High DC Current Gain
•BD 135, 137, 139 are complementary with BD 136, 138, 140
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
得捷:
TRANS NPN 60V 1.5A TO126
艾睿:
Trans GP BJT NPN 60V 1.5A 1250mW 3-Pin3+Tab TO-225 Box
额定电压DC 60.0 V
额定电流 1.50 A
极性 NPN
击穿电压集电极-发射极 60 V
集电极最大允许电流 1.5A
最小电流放大倍数hFE 40 @150mA, 2V
最大电流放大倍数hFE 250
额定功率Max 1.25 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1250 mW
安装方式 Through Hole
引脚数 3
封装 TO-126-3
封装 TO-126-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Box
最小包装 500
RoHS标准 Non-Compliant
含铅标准 Contains Lead
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BD137 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BD137G 安森美 | 类似代替 | BD137和BD137G的区别 |
BD137-BP 美微科 | 功能相似 | BD137和BD137-BP的区别 |