DIODES INC. BSS123TA 晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
The is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is produced using DIODES proprietary high density uses advanced Trench technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and switching applications.
额定电压DC 100 V
额定电流 170 mA
针脚数 3
漏源极电阻 6 Ω
极性 N-Channel
耗散功率 300 mW
阈值电压 2.2 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 170 mA
上升时间 8 ns
正向电压Max 1.3 V
输入电容Ciss 20pF @25VVds
额定功率Max 360 mW
下降时间 16 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 360mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Defence, Military & Aerospace, , 军用与航空, 电机驱动与控制, 国防, Power Management, Aerospace, Defence, Military, , 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
军工级 Yes
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BSS123TA Diodes 美台 | 当前型号 | 当前型号 |
BSS123-7-F 美台 | 类似代替 | BSS123TA和BSS123-7-F的区别 |
BS170P 美台 | 功能相似 | BSS123TA和BS170P的区别 |
ZVP2120ASTZ 美台 | 功能相似 | BSS123TA和ZVP2120ASTZ的区别 |